Iron detection in crystalline silicon by carrier lifetime measurements for arbitrary injection and doping

Recombination in compensated crystalline silicon for solar cells

Deliberate compensation of crystalline silicon results in a decrease in the equilibrium carrier concentration, which leads to an increased carrier lifetime for the intrinsic recombination processes of Auger and radiative recombination. We present modeling which reveals that compensation also often leads to a significant increase in lifetime for recombination through defects via the Shockley–Rea...

Imaging of the interstitial iron concentration in crystalline silicon by measuring the dissociation rate of iron–boron pairs

Iron is a well-known and detrimental impurity in crystalline silicon (c-Si) for solar cells [1], especially in blockcast multicrystalline silicon (mc-Si). So far, most measurement techniques used to determine the spatial distribution of interstitial iron (Fei) in B-doped silicon wafers are based on measurements of the carrier lifetimes or diffusion lengths before and after iron–boron (FeB) pair...

Recombination activity of iron-gallium and iron-indium pairs in silicon

The recombination activity of iron-gallium sFeGad and iron-indium sFeInd pairs in crystalline silicon is studied by means of injection-dependent carrier lifetime measurements on Fe-implanted, Gaand In-doped p-type silicon wafers of different resistivities s0.3–15 V cmd. Compared to FeB pairs, FeGa and FeIn pairs are found to be much more effective recombination centers in p-type silicon. Using ...

Doping dependence of the carrier lifetime crossover point upon dissociation of iron- boron pairs in crystalline silicon

An accurate method for calibrating photoluminescence-based lifetime images on multi-crystalline silicon wafers

We present a method for converting photoluminescence images into carrier lifetime images for siliconwafers with inhomogeneous lifetime distributions, such as multi-crystalline silicon wafers, based on a calibration factor extracted from a separate, homogeneous, mono-crystalline calibration wafer and simple optical modelling of the photoluminescence signal from both the calibrationwafer and the ...